| PART |
Description |
Maker |
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BAV99 Q68000-A549 |
SILICON SWITCHING DIODE ARRAY (FOR HIGH-SPEED SWITCHING CONNECTED IN SERIES)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| BAW100 Q62702-A376 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
|
Siemens Group
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-A1030 BAV70W |
From old datasheet system
SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group
SIEMENS AG
|
| BAW56 Q62702-A688 BAW56-BOXREELOF3K |
ER 3C 3#12 SKT PLUG 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
INVERTER 12V-INPUT 1700V-OUTPUT
Programmable Skew Clock Buffer
Silicon Switching Diode Array (For high-speed switching applications Common anode)
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| RD0506T-H RD0506T-TL-H RD0506T12 ENA1574B |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
